IGBT Module,GD600SGT120C2S_G8,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±30

V

IC

Collector Current  @ TC=25oC

@ TC=90oC

890

600

A

ICM

Pulsed Collector Current  tp=1ms

1200

A

PD

Maximum Power Dissipation  @ Tj=175oC

2830

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

600

A

IFM

Diode Maximum Forward Current  tp=1ms

1200

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=600A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=600A,VGE=15V, Tj=125oC

1.95

IC=600A,VGE=15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=24.0mA,VCE=VGE, Tj=25oC

5.0

5.6

6.5

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.5

Ω

Cies

Input Capacitance

VCE=30V,f=1MHz,

VGE=0V

52.0

nF

Cres

Reverse Transfer

Capacitance

1.68

nF

QG

Gate Charge

VGE=15V

3.28

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=600A,  RG= 1. 1Ω,

VGE=±15V, Tj=25oC

332

ns

tr

Rise Time

106

ns

td(off)

Turn-Off Delay Time

525

ns

tf

Fall Time

125

ns

Eon

Turn-On Switching

Loss

12.6

mJ

Eoff

Turn-Off Switching

Loss

54.6

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=600A,  RG= 1. 1Ω,

VGE=±15V, Tj= 125oC

335

ns

tr

Rise Time

110

ns

td(off)

Turn-Off Delay Time

575

ns

tf

Fall Time

168

ns

Eon

Turn-On Switching

Loss

21.2

mJ

Eoff

Turn-Off Switching

Loss

69.2

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=600A,  RG= 1. 1Ω,

VGE=±15V, Tj= 150oC

340

ns

tr

Rise Time

112

ns

td(off)

Turn-Off Delay Time

586

ns

tf

Fall Time

185

ns

Eon

Turn-On Switching

Loss

22.9

mJ

Eoff

Turn-Off Switching

Loss

74.0

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,

VCC=900V, VCEM≤1200V

2400

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=600A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=600A,VGE=0V,Tj= 125oC

1.85

IF=600A,VGE=0V,Tj= 150oC

1.85

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=5800A/μs,VGE=- 15V, Tj=25oC

58.6

μC

IRM

Peak Reverse

Recovery Current

472

A

Erec

Reverse Recovery Energy

29.6

mJ

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=5800A/μs,VGE=- 15V, Tj= 125oC

106

μC

IRM

Peak Reverse

Recovery Current

604

A

Erec

Reverse Recovery Energy

52.8

mJ

Qr

Recovered Charge

VCC=600V,IF=600A,

-di/dt=5800A/μs,VGE=- 15V, Tj= 150oC

122

μC

IRM

Peak Reverse

Recovery Current

644

A

Erec

Reverse Recovery Energy

60.7

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.18

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.053

0.071

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.061

0.082

0.035

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g