1700V 600A
Brief introduction
IGBT module, produced by STARPOWER. 1700V 600A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD600HFT170C3S | Units |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | @ TC=25℃ @ TC=80℃ | 950 | A |
600 | |||
ICM(1) | Pulsed Collector Current tp= 1ms | 1200 | A |
IF | Diode Continuous Forward Current | 600 | A |
IFM | Diode Maximum Forward Current | 1200 | A |
PD | Maximum power Dissipation @ Tj=175℃ | 3571 | W |
Tj | Maximum Junction Temperature | 150 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 3400 | V |
Mounting Torque | Power Terminal Screw:M4 Power Terminal Screw:M8 | 1.8 to 2.1 8.0 to 10 | N.m |
Mounting Screw:M6 | 4.25 to 5.75 | N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise note
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR) CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1700 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=24mA,VCE=VGE, Tj=25℃ | 5.2 | 5.8 | 6.4 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=600A,VGE=15V, Tj=25℃ |
| 2.00 | 2.45 |
V |
IC=600A,VGE=15V, Tj=125℃ |
| 2.40 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
QG | Gate charge | VGE=-15…+15V |
| 7.0 |
| μC |
td(on) | Turn-On Delay Time |
VCC=900V,IC=600A, RGon=2.4Ω, RGoff=3.0Ω, VGE=±15V,Tj=25℃ |
| 650 |
| ns |
tr | Rise Time |
| 155 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1300 |
| ns | |
tf | Fall Time |
| 180 |
| ns | |
Eon | Turn-On Switching Loss |
| 125 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 186 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=600A, RGon=2.4Ω, RGoff=3.0Ω, VGE=±15V,Tj=125℃ |
| 701 |
| ns |
tr | Rise Time |
| 198 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1590 |
| ns | |
tf | Fall Time |
| 302 |
| ns | |
Eon | Turn-On Switching Loss |
| 186 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 219 |
| mJ | |
Cies | Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
| 52.8 |
| nF |
Coes | Output Capacitance |
| 2.20 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 1.75 |
| nF | |
ISC |
SC Data | tSC≤10μs,VGE=15V, Tj=125℃,VCC=1000V, VCEM ≤1700V |
|
2400 |
|
A |
RGint | Internal Gate Resistance |
|
| 1.3 |
| Ω |
LCE | Stray Inductance |
|
| 20 |
| nH |
RCC’+EE’ | Module Lead Resistance, Terminal to Chip |
|
| 0.18 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=600A | Tj=25℃ |
| 1.80 | 2.20 | V |
Tj=125℃ |
| 1.90 |
| ||||
Qr | Recovered Charge |
IF=600A, VR=900V, di/dt=-3800A/μs, VGE=-15V | Tj=25℃ |
| 580 |
| μC |
Tj=125℃ |
| 640 |
| ||||
IRM | Peak Reverse Recovery Current | Tj=25℃ |
| 160 |
| A | |
Tj=125℃ |
| 258 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 96 |
| mJ | |
Tj=125℃ |
| 171 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 42 | K/kW |
RθJC | Junction-to-Case (per Diode) |
| 94 | K/kW |
RθCS | Case-to-Sink (Conductive grease applied, per Module) | 6 |
| K/kW |
Weight | Weight of Module | 1500 |
| g |
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