IGBT Module,,GD450HFL170C2S,STARPOWER

1700V 450A

Brand:

STARPOWER

Spu:

GD450HFL170C2S

Brief introduction

IGBT module, produced by STARPOWER. 1700V 450A.

Features

Typical Applications

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=95oC	683 450	A
ICM	Pulsed Collector Current tp=1ms	900	A
PD	Maximum Power Dissipation T =175oC	2678	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	450	A
IFM	Diode Maximum Forward Current tp=1ms	900	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VCE(sat)	Collector to Emitter Saturation Voltage	IC=450A,VGE=15V, Tj=25oC		2.00	2.45	V
		IC=450A,VGE=15V, Tj=125oC		2.40
		IC=450A,VGE=15V, Tj=150oC		2.50
VGE(th)	Gate-Emitter Threshold Voltage	IC= 18.0mA,VCE=VGE, Tj=25oC	5.4	6.1	7.4	V
ICES	Collector Cut-Off Current	VCE=VCES,VGE=0V, Tj=25oC			5.0	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			0.3		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz, VGE=0V		30.0		nF
Cres	Reverse Transfer Capacitance	VCE=25V,f=1MHz, VGE=0V		1.08		nF
QG	Gate Charge	VGE=-15…+15V		2.70		μC
td(on)	Turn-On Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC		504		ns
tr	Rise Time			183		ns
td(off)	Turn-Off Delay Time			616		ns
tf	Fall Time			188		ns
Eon	Turn-On Switching Loss			126		mJ
Eoff	Turn-Off Switching Loss			89		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC		506		ns
tr	Rise Time			194		ns
td(off)	Turn-Off Delay Time			704		ns
tf	Fall Time			352		ns
Eon	Turn-On Switching Loss			162		mJ
Eoff	Turn-Off Switching Loss			124		mJ
td(on)	Turn-On Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC		510		ns
tr	Rise Time			198		ns
td(off)	Turn-Off Delay Time			727		ns
tf	Fall Time			429		ns
Eon	Turn-On Switching Loss			174		mJ
Eoff	Turn-Off Switching Loss			132		mJ
ISC	SC Data	tP≤10μs,VGE=15V, Tj= 150oC,VCC= 1000V, VCEM≤1700V		1440		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VF	Diode Forward Voltage	IF=450A,VGE=0V,Tj=25oC		1.87	2.32	V
		IF=450A,VGE=0V,Tj= 125oC		2.00
		IF=450A,VGE=0V,Tj= 150oC		2.05
Qr	Recovered Charge	VR=900V,IF=450A, -di/dt=3000A/μs,VGE=-15V Tj=25oC		107		μC
IRM	Peak Reverse Recovery Current			519		A
Erec	Reverse Recovery Energy			75		mJ
Qr	Recovered Charge	VR=900V,IF=450A, -di/dt=3000A/μs,VGE=-15V Tj= 125oC		159		μC
IRM	Peak Reverse Recovery Current			597		A
Erec	Reverse Recovery Energy			113		mJ
Qr	Recovered Charge	VR=900V,IF=450A, -di/dt=3000A/μs,VGE=-15V Tj= 150oC		170		μC
IRM	Peak Reverse Recovery Current			611		A
Erec	Reverse Recovery Energy			119		mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Min.	Typ.	Max.	Unit
LCE	Stray Inductance			20	nH
RCC’+EE’	Module Lead Resistance, Terminal to Chip		0.35		mΩ
RthJC	Junction-to-Case (per IGBT) Junction-to-Case (per Diode)			0.056 0.112	K/W
RthCH	Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module)		0.105 0.210 0.035		K/W
M	Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6	2.5 3.0		5.0 5.0	N.m
G	Weight of Module		300		g