IGBT Module,GD400HFX170C2S,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

648

400

A

ICM

Pulsed Collector Current  tp=1ms

800

A

PD

Maximum Power Dissipation      T =175oC

2380

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

400

A

IFM

Diode Maximum Forward Current  tp=1ms

800

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tj=25oC

1.85

2.20

V

IC=400A,VGE=15V, Tj=125oC

2.25

IC=400A,VGE=15V, Tj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC= 16.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

1.88

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

48.2

nF

Cres

Reverse Transfer

Capacitance

1.17

nF

QG

Gate Charge

VGE=- 15V…+15V

3.77

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=400A,    RG=0.82Ω,VGE=±15V, Tj=25oC

204

ns

tr

Rise Time

38

ns

td(off)

Turn-Off Delay Time

425

ns

tf

Fall Time

113

ns

Eon

Turn-On Switching

Loss

97.9

mJ

Eoff

Turn-Off Switching

Loss

84.0

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=400A,    RG=0.82Ω,VGE=±15V, Tj=125oC

208

ns

tr

Rise Time

50

ns

td(off)

Turn-Off Delay Time

528

ns

tf

Fall Time

184

ns

Eon

Turn-On Switching

Loss

141

mJ

Eoff

Turn-Off Switching

Loss

132

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=400A,    RG=0.82Ω,VGE=±15V, Tj=150oC

216

ns

tr

Rise Time

50

ns

td(off)

Turn-Off Delay Time

544

ns

tf

Fall Time

204

ns

Eon

Turn-On Switching

Loss

161

mJ

Eoff

Turn-Off Switching

Loss

137

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC= 100V, VCEM≤1700V

1600

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=400A,VGE=0V,Tj=125oC

1.90

IF=400A,VGE=0V,Tj=150oC

1.95

Qr

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=- 15V Tj=25oC

116

μC

IRM

Peak Reverse

Recovery Current

666

A

Erec

Reverse Recovery Energy

63.8

mJ

Qr

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=- 15V Tj=125oC

187

μC

IRM

Peak Reverse

Recovery Current

662

A

Erec

Reverse Recovery Energy

114

mJ

Qr

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=- 15V Tj=150oC

209

μC

IRM

Peak Reverse

Recovery Current

640

A

Erec

Reverse Recovery Energy

132

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.063

0.105

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.032

0.053

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g