Brief introduction
IGBT module, produced by STARPOWER. 1700V 400A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD400HFT170C3S | Units |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25℃ @ TC= 100℃ | 615 400 | A |
ICM | Pulsed Collector Current tp=1ms | 800 | A |
IF | Diode Continuous Forward Current | 400 | A |
IFM | Diode Maximum Forward Current tp=1ms | 800 | A |
PD | Maximum Power Dissipation @ Tj=175℃ | 2.49 | kW |
Tjmax | Maximum Junction Temperature | 175 | ℃ |
Tjop | Maximum Junction Temperature | -40 to +150 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
M | Terminal Connection Torque, Screw M4 | 1.8 to 2.1 |
|
Terminal Connection Torque, Screw M8 | 8.0 to 10 | N.m | |
Mounting Torque, Screw M6 | 4.25 to 5.75 |
| |
G | Weight of Module | 1500 | g |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1700 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=16.0mA,VCE=VGE, Tj=25℃ | 5.2 | 5.8 | 6.4 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=400A,VGE=15V, Tj=25℃ |
| 2.00 | 2.45 |
V |
IC=400A,VGE=15V, Tj=125℃ |
| 2.40 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
td(on) | Turn-On Delay Time |
VCC=900V,IC=400A, RG=3.6Ω,VGE=±15V, Tj=25℃ |
| 281 |
| ns |
tr | Rise Time |
| 79 |
| ns | |
td(off) | Turn-Off Delay Time |
| 795 |
| ns | |
tf | Fall Time |
| 120 |
| ns | |
Eon | Turn-On Switching Loss |
| 104 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 86 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=400A, RG=3.6Ω,VGE=±15V, Tj=125℃ |
| 299 |
| ns |
tr | Rise Time |
| 102 |
| ns | |
td(off) | Turn-Off Delay Time |
| 998 |
| ns | |
tf | Fall Time |
| 202 |
| ns | |
Eon | Turn-On Switching Loss |
| 136 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 124 |
| mJ | |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 35.3 |
| nF |
Cres | Reverse Transfer Capacitance |
| 1.17 |
| nF | |
ISC | SC Data | tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V |
| 1600 |
| A |
RGint | Internal Gate Resistance |
|
| 3.1 |
| Ω |
LCE | Stray Inductance |
|
| 20 |
| nH |
RCC’+EE’ | Module Lead Resistance, Terminal To Chip |
|
|
0.37 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=400A | Tj=25℃ |
| 1.80 | 2.20 | V |
Tj=125℃ |
| 1.90 |
| ||||
Qr | Recovered Charge | IF=400A, VR=900V, RG=3.6Ω, VGE=-15V | Tj=25℃ |
| 100 |
| μC |
Tj=125℃ |
| 170 |
| ||||
IRM | Peak Reverse Recovery Current | Tj=25℃ |
| 440 |
| A | |
Tj=125℃ |
| 480 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 54.0 |
| mJ | |
Tj=125℃ |
| 95.0 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 60.3 | K/kW |
RθJC | Junction-to-Case (per Diode) |
| 109 | K/kW |
RθCS | Case-to-Sink (Conductive grease applied) | 6 |
| K/kW |
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