Brief introduction
IGBT module, produced by STARPOWER. 1700V 400A.
Features
Typical Applications
IGBT TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol | Description | GD400CUT170C2S | Units |
VCES | Collector-Emitter Voltage @ Tj=25℃ | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25℃ @ TC=80℃ | 650 400 | A |
ICM | Pulsed Collector Current tp=1ms | 800 | A |
Ptot | Total Power Dissipation @ Tj= 150℃ | 2403 | W |
TSC | Short Circuit Withstand Time @ Tj=150℃ | 10 | μs |
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1700 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 3.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC= 16mA,VCE=VGE, Tj=25℃ | 5.2 | 5.8 | 6.4 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=400A,VGE=15V, Tj=25℃ |
| 2.00 | 2.45 |
V |
IC=400A,VGE=15V, Tj= 125℃ |
| 2.40 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | ||
td(on) | Turn-On Delay Time |
VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15V, Tj=25℃ |
| 278 |
| ns | ||
tr | Rise Time |
| 81 |
| ns | |||
td(off) | Turn-Off Delay Time |
| 802 |
| ns | |||
tf | Fall Time |
| 119 |
| ns | |||
Eon | Turn-On Switching Loss |
| 104 |
| mJ | |||
Eoff | Turn-Off Switching Loss |
| 86 |
| mJ | |||
td(on) | Turn-On Delay Time | VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15V, Tj= 125℃ |
| 302 |
| ns | ||
tr | Rise Time |
| 99 |
| ns | |||
td(off) | Turn-Off Delay Time |
| 1002 |
| ns | |||
tf | Fall Time |
| 198 |
| ns | |||
Eon | Turn-On Switching Loss | VCC=900V,IC=400A, RG=3.6Ω,VGE= ±15V, Tj= 125℃ |
| 136 |
| mJ | ||
Eoff | Turn-Off Switching Loss |
| 124 |
| mJ | |||
Cies | Input Capacitance |
VCE=25V,f=1Mhz, VGE=0V |
| 36 |
| pF | ||
Coes | Output Capacitance |
| 1.5 |
| pF | |||
Cres | Reverse Transfer Capacitance |
| 1.2 |
| pF | |||
RGint | Internal Gate Resistance |
|
| 1.9 |
| Ω | ||
ISC |
SC Data | TP ≤10μs,VGE=15V, Tj=125℃,VCC= 1000V, VCEM≤1700V |
|
1600 |
|
A | ||
DIODE TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol | Description | GD400CUT170C2S | Units |
VRRM | Repetitive Peak Reverse Voltage @ Tj=25℃ | 1700 | V |
IF | DC Forward Current @ TC=80℃ | 100 | A |
IFRM | Repetitive Peak Forward Current tp=1ms | 200 | A |
I2t | I2t-value,VR=0V,tp=10ms,Tj=125℃ | 1800 | A2s |
Characteristics Values
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF= 100A,VGE=0V | Tj=25℃ |
| 1.80 | 2.20 | V |
Tj= 125℃ |
| 1.90 |
| ||||
Qr | Diode Reverse Recovery Charge |
IF= 100A, VR=900V, di/dt=-2450A/μs, VGE=- 15V | Tj=25℃ |
| 29.0 |
| μC |
Tj= 125℃ |
| 48.5 |
| ||||
IRM | Diode Peak Reverse Recovery Current | Tj=25℃ |
| 155 |
|
A | |
Tj= 125℃ |
| 165 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 15.5 |
| mJ | |
Tj= 125℃ |
| 27.5 |
| ||||
IGBT Module
Symbol | Parameter | Min. | Typ. | Max. | Units |
VISO | Isolation Voltage RMS,f=50Hz,t=1min |
| 2500 |
| V |
LCE | Stray Inductance |
|
| 20 | nH |
RCC’+EE ’ | Module Lead Resistance,Terminal to Chip @ TC=25℃ |
| 0.35 |
| mΩ |
RθJC | Junction-to-Case (IGBT-inverter,per 1/2 Module) |
|
| 0.052 |
K/W |
Junction-to-Case (DIODE-brake-chopper per 1/2 Module) |
|
| 0.280 | ||
RθCS | Case-to-Sink (Conductive grease applied) |
| 0.035 |
| K/W |
Tj | Maximum Junction Temperature |
| 150 |
| ℃ |
TSTG | Storage Temperature Range | -40 |
| 125 | ℃ |
Mounting Torque | Power Terminal Screw:M6 | 2.5 |
| 5.0 | N.m |
Mounting Screw:M6 | 3.0 |
| 5.0 | ||
G | Weight of Module |
| 300 |
| g |
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