Brief introduction
IGBT module, produced by STARPOWER. 1200V 3600A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD3600SGT120C4S | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | @ TC=25℃ @ TC=80℃ | 4800 | A |
3600 | |||
ICM(1) | Pulsed Collector Current tp= 1ms | 7200 | A |
IF | Diode Continuous Forward Current | 3600 | A |
IFM | Diode Maximum Forward Current | 7200 | A |
PD | Maximum power Dissipation @ Tj=175℃ | 16.7 | kW |
Tjmax | Maximum Junction Temperature | 175 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
Mounting | Signal Terminal Screw:M4 | 1.8 to 2.1 |
|
Power Terminal Screw:M8 | 8.0 to 10 | N.m | |
Torque | Mounting Screw:M6 | 4.25 to 5.75 |
|
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1200 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=145mA,VCE=VGE, Tj=25℃ | 5.0 | 5.8 | 6.5 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=3600A,VGE=15V, Tj=25℃ |
| 1.70 | 2.15 |
V |
IC=3600A,VGE=15V, Tj=125℃ |
| 2.00 | 2.45 |
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
QG | Gate charge | VGE=- 15…+15V |
| 35.0 |
| μC |
RGint | Internal Gate Resistor | Tj=25℃ |
| 0.5 |
| Ω |
td(on) | Turn-On Delay Time |
VCC=600V,IC=3600A, RGon=0.8Ω, RGoff=0.2Ω, VGE=±15V,Tj=25℃ |
| 600 |
| ns |
tr | Rise Time |
| 235 |
| ns | |
td(off) | Turn-Off Delay Time |
| 825 |
| ns | |
tf | Fall Time |
| 145 |
| ns | |
Eon | Turn-On Switching Loss |
| / |
| mJ | |
Eoff | Turn-Off Switching Loss |
| / |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=3600A, RGon=0.8Ω, RGoff=0.2Ω, VGE=±15V,Tj=125℃ |
| 665 |
| ns |
tr | Rise Time |
| 215 |
| ns | |
td(off) | Turn-Off Delay Time |
| 970 |
| ns | |
tf | Fall Time |
| 180 |
| ns | |
Eon | Turn-On Switching Loss |
| 736 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 569 |
| mJ | |
Cies | Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
| 258 |
| nF |
Coes | Output Capacitance |
| 13.5 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 11.7 |
| nF | |
ISC |
SC Data | tSC≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
14000 |
|
A |
LCE | Stray Inductance |
|
| 10 |
| nH |
RCC’+EE ’ | Module Lead Resistance, Terminal To Chip |
|
| 0.12 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=3600A | Tj=25℃ |
| 1.65 | 2.15 | V |
Tj=125℃ |
| 1.65 | 2.15 | ||||
Qr | Recovered Charge |
IF=3600A, VR=600V, RGon=0.8Ω, VGE=- 15V | Tj=25℃ |
| 360 |
| μC |
Tj=125℃ |
| 670 |
| ||||
IRM | Reverse Recovery Current | Tj=25℃ |
| 2500 |
| A | |
Tj=125℃ |
| 3200 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 97 |
| mJ | |
Tj=125℃ |
| 180 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 9.0 | K/kW |
RθJC | Junction-to-Case (per Diode) |
| 15.6 | K/kW |
RθCS | Case-to-Sink (Conductive grease applied, per Module) | 4 |
| K/kW |
Weight | Weight of Module | 2250 |
| g |
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