Brief introduction
IGBT module, produced by STARPOWER. 1700V 300A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD300SGL170C2S | Units |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25℃ @ TC= 100℃ | 460 300 | A |
ICM | Pulsed Collector Current tp=1ms | 600 | A |
IF | Diode Continuous Forward Current | 300 | A |
IFM | Diode Maximum Forward Current tp=1ms | 600 | A |
PD | Maximum Power Dissipation @ Tj=175℃ | 2273 | W |
Tjmax | Maximum Junction Temperature | 175 | ℃ |
Tjop | Operating Junction Temperature | -40 to +150 | ℃ |
Tstg | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
M | Terminal Connection Torque, Screw M4 | 1.1 to 2.0 |
|
Terminal Connection Torque, Screw M6 | 2.5 to 5.0 | N.m | |
Mounting Torque, Screw M6 | 3.0 to 5.0 |
| |
G | Weight of Module | 300 | g |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1700 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=24.0mA,VCE=VGE, Tj=25℃ | 5.4 | 6.2 | 7.4 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=300A,VGE=15V, Tj=25℃ |
| 2.50 | 2.95 |
V |
IC=300A,VGE=15V, Tj=125℃ |
| 3.00 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
td(on) | Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω,VGE=±15V, Tj=25℃ |
| 464 |
| ns |
tr | Rise Time |
| 157 |
| ns | |
td(off) | Turn-Off Delay Time |
| 421 |
| ns | |
tf | Fall Time |
| 290 |
| ns | |
Eon | Turn-On Switching Loss |
| 108 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 55.2 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω,VGE=±15V, Tj= 125℃ |
| 483 |
| ns |
tr | Rise Time |
| 161 |
| ns | |
td(off) | Turn-Off Delay Time |
| 465 |
| ns | |
tf | Fall Time |
| 538 |
| ns | |
Eon | Turn-On Switching Loss |
| 128 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 83.7 |
| mJ | |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 20.4 |
| nF |
Cres | Reverse Transfer Capacitance |
| 0.72 |
| nF | |
ISC |
SC Data | tP≤10μs,VGE=15 V, Tj=125℃,V CC= 1300 V, VCEM≤1700V |
|
960 |
|
A |
QG | Gate Charge | VCC=900V,IC=300A, VGE=-15 ﹍+15V |
| 2.4 |
| μC |
LCE | Stray Inductance |
|
|
| 20 | nH |
RCC’+EE’ | Module Lead Resistance, Terminal To Chip |
|
|
0.18 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=300A | Tj=25℃ |
| 1.80 | 2.25 | V |
Tj=125℃ |
| 1.95 |
| ||||
Qr | Recovered Charge | IF=300A, VR=900V, RG=4.7Ω, VGE=-15V | Tj=25℃ |
| 70.3 |
| μC |
Tj=125℃ |
| 108 |
| ||||
IRM | Peak Reverse Recovery Current | Tj=25℃ |
| 209 |
| A | |
Tj=125℃ |
| 238 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 40.7 |
| mJ | |
Tj=125℃ |
| 65.1 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 0.066 | K/W |
RθJC | Junction-to-Case (per Diode) |
| 0.105 | K/W |
RθCS | Case-to-Sink (Conductive grease applied) | 0.035 |
| K/W |
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