IGBT Module,GD300HFX170C2S,,STARPOWER

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

493

300

A

ICM

Pulsed Collector Current  tp=1ms

600

A

PD

Maximum Power Dissipation      T =175oC

1829

W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=300A,VGE=15V, Tj=25oC

1.85

2.20

V

IC=300A,VGE=15V, Tj=125oC

2.25

IC=300A,VGE=15V, Tj=150oC

2.35

VGE(th)

Gate-Emitter Threshold Voltage

IC= 12.0mA,VCE=VGE, Tj=25oC

5.6

6.2

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

2.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

36.1

nF

Cres

Reverse Transfer

Capacitance

0.88

nF

QG

Gate Charge

VGE=- 15…+15V

2.83

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=300A,  RG=2.4Ω,

VGE=±15V, Tj=25oC

204

ns

tr

Rise Time

48

ns

td(off)

Turn-Off Delay Time

595

ns

tf

Fall Time

100

ns

Eon

Turn-On Switching

Loss

69.3

mJ

Eoff

Turn-Off Switching

Loss

63.3

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A,  RG=2.4Ω

,VGE=±15V, Tj= 125oC

224

ns

tr

Rise Time

55

ns

td(off)

Turn-Off Delay Time

611

ns

tf

Fall Time

159

ns

Eon

Turn-On Switching

Loss

96.8

mJ

Eoff

Turn-Off Switching

Loss

99.0

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A,  RG=2.4Ω

,VGE=±15V, Tj= 150oC

240

ns

tr

Rise Time

55

ns

td(off)

Turn-Off Delay Time

624

ns

tf

Fall Time

180

ns

Eon

Turn-On Switching

Loss

107

mJ

Eoff

Turn-Off Switching

Loss

105

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC= 1000V, VCEM≤1700V

1200

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=300A,VGE=0V,Tj= 125oC

1.90

IF=300A,VGE=0V,Tj= 150oC

1.95

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=5400A/μs,VGE=- 15V Tj=25oC

55

μC

IRM

Peak Reverse

Recovery Current

297

A

Erec

Reverse Recovery Energy

32.2

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=5400A/μs,VGE=- 15V Tj=125oC

116

μC

IRM

Peak Reverse

Recovery Current

357

A

Erec

Reverse Recovery Energy

68.2

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=5400A/μs,VGE=- 15V Tj=150oC

396

μC

IRM

Peak Reverse

Recovery Current

120

A

Erec

Reverse Recovery Energy

81.6

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.082

0.129

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.033

0.051

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g