IGBT Module,GD300HFL170C2S,STARPOWER

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC=90oC

430

300

A

ICM

Pulsed Collector Current  tp=1ms

600

A

PD

Maximum Power Dissipation  @ T =175oC

1851

W

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current  tp=1ms

600

A

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=300A,VGE=15V, Tj=25oC

2.40

2.85

V

IC=300A,VGE=15V, Tj=125oC

2.80

IC=300A,VGE=15V, Tj=150oC

2.90

VGE(th)

Gate-Emitter Threshold Voltage

IC= 12.0mA,VCE=VGE, Tj=25oC

5.4

6.2

7.4

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

2.3

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

20.0

nF

Cres

Reverse Transfer

Capacitance

0.72

nF

QG

Gate Charge

VGE=- 15…+15V

1.8

μC

td(on)

Turn-On Delay Time

VCC=900V,IC=300A,  RG=4.7Ω,

VGE=±15V, Tj=25oC

464

ns

tr

Rise Time

157

ns

td(off)

Turn-Off Delay Time

421

ns

tf

Fall Time

290

ns

Eon

Turn-On Switching

Loss

108

mJ

Eoff

Turn-Off Switching

Loss

55.2

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A,  RG=4.7Ω,

VGE=±15V, Tj=125oC

483

ns

tr

Rise Time

161

ns

td(off)

Turn-Off Delay Time

465

ns

tf

Fall Time

538

ns

Eon

Turn-On Switching

Loss

128

mJ

Eoff

Turn-Off Switching

Loss

83.7

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=300A,  RG=4.7Ω,

VGE=±15V, Tj=150oC

492

ns

tr

Rise Time

165

ns

td(off)

Turn-Off Delay Time

483

ns

tf

Fall Time

747

ns

Eon

Turn-On Switching

Loss

141

mJ

Eoff

Turn-Off Switching

Loss

92.1

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj= 150oC,VCC= 1000V, VCEM≤1700V

960

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=300A,VGE=0V,Tj=125oC

1.95

IF=300A,VGE=0V,Tj=150oC

1.90

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=2800A/μs,VGE=- 15V Tj=25oC

70

μC

IRM

Peak Reverse

Recovery Current

209

A

Erec

Reverse Recovery Energy

40.7

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=2800A/μs,VGE=- 15V Tj=125oC

108

μC

IRM

Peak Reverse

Recovery Current

238

A

Erec

Reverse Recovery Energy

65.1

mJ

Qr

Recovered Charge

VR=900V,IF=300A,

-di/dt=2800A/μs,VGE=- 15V Tj=150oC

123

μC

IRM

Peak Reverse

Recovery Current

253

A

Erec

Reverse Recovery Energy

71.6

mJ

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

15

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.25

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.081

0.138

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.032

0.054

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g