Brief introduction
IGBT module, produced by STARPOWER,1200V 2400A.
Features
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD2400SGT120C3S | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | @ TC=25℃ @ TC=80℃ | 3400 | A |
2400 | |||
ICM(1) | Pulsed Collector Current tp= 1ms | 4800 | A |
IF | Diode Continuous Forward Current | 2400 | A |
IFM | Diode Maximum Forward Current | 4800 | A |
PD | Maximum power Dissipation @ Tj= 150℃ | 9.6 | kW |
Tj | Maximum Junction Temperature | 150 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
Mounting | Signal Terminal Screw:M4 Power Terminal Screw:M8 | 1.8 to 2.1 8.0 to 10 |
N.m |
Torque | Mounting Screw:M6 | 4.25 to 5.75 |
|
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
V(BR)CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1200 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=96mA,VCE=VGE, Tj=25℃ | 5.0 | 5.8 | 6.5 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=2400A,VGE=15V, Tj=25℃ |
| 1.70 | 2.15 |
V |
IC=2400A,VGE=15V, Tj= 125℃ |
| 2.00 | 2.45 |
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
QG | Gate charge | VGE=- 15…+15V |
| 23.0 |
| μC |
RGint | Internal Gate Resistor | Tj=25℃ |
| 0.8 |
| Ω |
td(on) | Turn-On Delay Time |
VCC=600V,IC=2400A, RGon= 1.2Ω, RGoff=0.3Ω VGE=±15V,Tj=25℃ |
| 600 |
| ns |
tr | Rise Time |
| 215 |
| ns | |
td(off) | Turn-Off Delay Time |
| 815 |
| ns | |
tf | Fall Time |
| 155 |
| ns | |
Eon | Turn-On Switching Loss |
| / |
| mJ | |
Eoff | Turn-Off Switching Loss |
| / |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=2400A, RGon= 1.2Ω, RGoff=0.3Ω VGE=±15V,Tj= 125℃ |
| 665 |
| ns |
tr | Rise Time |
| 235 |
| ns | |
td(off) | Turn-Off Delay Time |
| 970 |
| ns | |
tf | Fall Time |
| 185 |
| ns | |
Eon | Turn-On Switching Loss |
| 491 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 379 |
| mJ | |
Cies | Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
| 172 |
| nF |
Coes | Output Capacitance |
| 9.01 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 7.81 |
| nF | |
ISC |
SC Data | tSC≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V |
|
9600 |
|
A |
LCE | Stray Inductance |
|
| 12 |
| nH |
RCC’+EE ’ | Module Lead Resistance, Terminal To Chip |
|
| 0.19 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=2400A | Tj=25℃ |
| 1.65 | 2.15 | V |
Tj= 125℃ |
| 1.65 | 2.15 | ||||
Qr | Recovered Charge |
IF=2400A, VR=600V, RGon= 1.2Ω, VGE=- 15V | Tj=25℃ |
| 240 |
| μC |
Tj= 125℃ |
| 450 |
| ||||
IRM | Reverse Recovery Current | Tj=25℃ |
| 1600 |
| A | |
Tj= 125℃ |
| 2200 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 65 |
| mJ | |
Tj= 125℃ |
| 120 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (per IGBT) |
| 13 | K/kW |
RθJC | Junction-to-Case (per Diode) |
| 23 | K/kW |
RθCS | Case-to-Sink (Conductive grease applied, per Module) | 6 |
| K/kW |
Weight | Weight of Module | 1500 |
| g |
Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.
EN
