Brief introduction
IGBT module, produced by STARPOWER. 1200V 1600A.
Features
Low VCE(sat) SPT+ IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
AC inverter drives
Switching mode power supplies
Electronic welders
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol | Description | GD1600SGL120C3S | Units |
VCES | Collector-Emitter Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | @ TC=25℃ @ TC=80℃ | 2500 | A |
1600 | |||
ICM(1) | Pulsed Collector Current tp= 1ms | 3200 | A |
IF | Diode Continuous Forward Current | 1600 | A |
IFM | Diode Maximum Forward Current | 3200 | A |
PD | Maximum power Dissipation @ Tj=150℃ | 8.3 | kW |
TSC | Short Circuit Withstand Time @ Tj=125℃ | 10 | μs |
Tj | Maximum Junction Temperature | 150 | ℃ |
TSTG | Storage Temperature Range | -40 to +125 | ℃ |
I2t-value, Diode | VR=0V,t=10ms,Tj=125℃ | 300 | kA2s |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 2500 | V |
Mounting Torque | Power Terminal Screw:M4 Power Terminal Screw:M8 | 1.8 to 2.1 8.0 to 10 | N.m |
Mounting Screw:M6 | 4.25 to 5.75 | N.m |
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
BV CES | Collector-Emitter Breakdown Voltage | Tj=25℃ | 1200 |
|
| V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25℃ |
|
| 5.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25℃ |
|
| 400 | nA |
On Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VGE(th) | Gate-Emitter Threshold Voltage | IC=64mA,VCE=VGE, Tj=25℃ | 5.0 | 6.2 | 7.0 | V |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=1600A,VGE=15V, Tj=25℃ |
| 1.8 |
|
V |
IC=1600A,VGE=15V, Tj=125℃ |
| 2.0 |
|
Switching Characteristics
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
Qge | Gate charge | VGE=-15…+15V |
| 16.8 |
| μC |
td(on) | Turn-On Delay Time |
VCC=600V,IC=1600A, RG=0.82Ω, VGE=±15V,Tj=25℃ |
| 225 |
| ns |
tr | Rise Time |
| 105 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1100 |
| ns | |
tf | Fall Time |
| 100 |
| ns | |
Eon | Turn-On Switching Loss |
| 148 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 186 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=600V,IC=1600A, RG=0.82Ω, VGE=±15V,Tj=125℃ |
| 235 |
| ns |
tr | Rise Time |
| 105 |
| ns | |
td(off) | Turn-Off Delay Time |
| 1160 |
| ns | |
tf | Fall Time |
| 105 |
| ns | |
Eon | Turn-On Switching Loss |
| 206 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 239 |
| mJ | |
Cies | Input Capacitance |
VCE=25V,f=1MHz, VGE=0V |
| 119 |
| nF |
Coes | Output Capacitance |
| 8.32 |
| nF | |
Cres | Reverse Transfer Capacitance |
| 5.44 |
| nF | |
ISC |
SC Data | tSC≤10μs,VGE=15V, Tj=125℃, VCC=900V, VCEM ≤1200V |
|
7000 |
|
A |
RGint | Internal Gate Resistance |
|
| 0.1 |
| Ω |
LCE | Stray Inductance |
|
| 12 |
| nH |
RCC’+EE’ | Module Lead Resistance, Terminal to Chip | TC=25℃ |
| 0.19 |
| mΩ |
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
VF | Diode Forward Voltage | IF=1600A | Tj=25℃ |
| 2.1 |
| V |
Tj=125℃ |
| 2.2 |
| ||||
Qr | Recovered Charge |
IF=1600A, VR=600V, di/dt=-7500A/μs, VGE=-15V | Tj=25℃ |
| 73 |
| μC |
Tj=125℃ |
| 175 |
| ||||
IRM | Peak Reverse Recovery Current | Tj=25℃ |
| 510 |
| A | |
Tj=125℃ |
| 790 |
| ||||
Erec | Reverse Recovery Energy | Tj=25℃ |
| 17 |
| mJ | |
Tj=125℃ |
| 46 |
| ||||
Thermal Characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case (IGBT Part, per Module) |
| 15 | K/kW |
RθJC | Junction-to-Case (Diode Part, per Module) |
| 26 | K/kW |
RθCS | Case-to-Sink (Conductive grease applied, per Module) | 6 |
| K/kW |
Weight | Weight of Module | 1500 |
| g |
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