IGBT Module，1700V 1200A
Brief introduction
IGBT module,single switch IGBT modules produced by CRRC. 1700V 1200A.
Key Parameters
VCES | 1700 | V | |
VCE(sat) | (typ) | 1.80 | V |
IC | (max) | 1200 | A |
IC(RM) | (max) | 2400 | A |
Typical Applications
Features
Absolute Maximum Ratings
(Symbol) | (Parameter) | (Test Conditions) | (value) | (Unit) |
VCES | Collector-emitter voltage | V GE = 0V, TC= 25℃ | 1700 | V |
V GES | Gate-emitter voltage | TC= 25 ℃ | ± 20 | V |
I C | Collector-emitter current | TC = 75 ℃ | 1200 | A |
I C(PK) | Peak collector current | t P=1ms | 2400 | A |
P max | Max. transistor power dissipation | Tvj = 150。C, TC = 25 ℃ | 5.68 | kW |
I 2t | Diode I 2t | VR =0V, t P = 10ms, Tvj = 125℃ | 130 | kA2s |
Visol | Isolation voltage – per module | ( Commoned terminals to base plate), AC RMS,1 min, 50Hz,TC= 25 ℃ | 4000 | V |
Q PD | Partial discharge – per module | IEC1287. V 1 = 1800V, V2 = 1300V, 50Hz RMS, TC= 25 ℃ | 10 | pC |
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