IGBT Module，1700A 300A
Brief introduction
IGBT module, produced by STARPOWER. 1700V 300A.
Features
Typical Applications
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol | Description | Value | Unit |
VCES | Collector-Emitter Voltage | 1700 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC=25oC @ TC= 100oC | 490 300 | A |
ICM | Pulsed Collector Current tp=1ms | 600 | A |
PD | Maximum Power Dissipation @ T =175oC | 2027 | W |
Diode
Symbol | Description | Value | Unit |
VRRM | Repetitive Peak Reverse Voltage | 1700 | V |
IF | Diode Continuous Forward Current | 300 | A |
IFM | Diode Maximum Forward Current tp=1ms | 600 | A |
Module
Symbol | Description | Value | Unit |
Tjmax | Maximum Junction Temperature | 175 | oC |
Tjop | Operating Junction Temperature | -40 to +150 | oC |
TSTG | Storage Temperature Range | -40 to +125 | oC |
VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
IGBT Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VCE(sat) |
Collector to Emitter Saturation Voltage | IC=300A,VGE=15V, Tj=25oC |
| 2.40 | 2.85 |
V |
IC=300A,VGE=15V, Tj=125oC |
| 2.80 |
| |||
IC=300A,VGE=15V, Tj=150oC |
| 2.90 |
| |||
VGE(th) | Gate-Emitter Threshold Voltage | IC= 12.0mA,VCE=VGE, Tj=25oC | 5.4 | 6.2 | 7.4 | V |
ICES | Collector Cut-Off Current | VCE=VCES,VGE=0V, Tj=25oC |
|
| 1.0 | mA |
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC |
|
| 400 | nA |
Cies | Input Capacitance | VCE=25V,f=1MHz, VGE=0V |
| 20.3 |
| nF |
Cres | Reverse Transfer Capacitance |
| 0.69 |
| nF | |
QG | Gate Charge | VGE=- 15…+15V |
| 2.31 |
| μC |
td(on) | Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω, VGE=±15V, Tj=25oC |
| 200 |
| ns |
tr | Rise Time |
| 97 |
| ns | |
td(off) | Turn-Off Delay Time |
| 410 |
| ns | |
tf | Fall Time |
| 370 |
| ns | |
Eon | Turn-On Switching Loss |
| 82.0 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 60.0 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω, VGE=±15V, Tj= 125oC |
| 250 |
| ns |
tr | Rise Time |
| 99 |
| ns | |
td(off) | Turn-Off Delay Time |
| 630 |
| ns | |
tf | Fall Time |
| 580 |
| ns | |
Eon | Turn-On Switching Loss |
| 115 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 90.0 |
| mJ | |
td(on) | Turn-On Delay Time |
VCC=900V,IC=300A, RG=4.7Ω, VGE=±15V, Tj= 150oC |
| 260 |
| ns |
tr | Rise Time |
| 105 |
| ns | |
td(off) | Turn-Off Delay Time |
| 670 |
| ns | |
tf | Fall Time |
| 640 |
| ns | |
Eon | Turn-On Switching Loss |
| 125 |
| mJ | |
Eoff | Turn-Off Switching Loss |
| 100 |
| mJ | |
ISC |
SC Data | tP≤10μs,VGE=15V, Tj=150oC,VCC= 1000V, VCEM≤1700V |
|
1200 |
|
A |
Diode Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
VF | Diode Forward Voltage | IF=300A,VGE=0V,Tj=25oC |
| 1.80 | 2.25 |
V |
IF=300A,VGE=0V,Tj= 125oC |
| 1.95 |
| |||
IF=300A,VGE=0V,Tj= 150oC |
| 1.90 |
| |||
Qr | Recovered Charge | VR=900V,IF=300A, -di/dt=2800A/μs,VGE=- 15V Tj=25oC |
| 90.0 |
| μC |
IRM | Peak Reverse Recovery Current |
| 270 |
| A | |
Erec | Reverse Recovery Energy |
| 45.0 |
| mJ | |
Qr | Recovered Charge | VR=900V,IF=300A, -di/dt=2800A/μs,VGE=- 15V Tj= 125oC |
| 135 |
| μC |
IRM | Peak Reverse Recovery Current |
| 315 |
| A | |
Erec | Reverse Recovery Energy |
| 75.5 |
| mJ | |
Qr | Recovered Charge | VR=900V,IF=300A, -di/dt=2800A/μs,VGE=- 15V Tj= 150oC |
| 160 |
| μC |
IRM | Peak Reverse Recovery Current |
| 330 |
| A | |
Erec | Reverse Recovery Energy |
| 84.0 |
| mJ |
NTC Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
R25 | Rated Resistance |
|
| 5.0 |
| kΩ |
∆R/R | Deviation of R100 | TC= 100oC,R100=493.3Ω | -5 |
| 5 | % |
P25 | Power Dissipation |
|
|
| 20.0 | mW |
B25/50 | B-value | R2=R25exp[B25/50(1/T2- 1/(298.15K))] |
| 3375 |
| K |
Module Characteristics TC=25oC unless otherwise noted
Symbol | Parameter | Min. | Typ. | Max. | Unit |
LCE | Stray Inductance |
| 20 |
| nH |
RCC’+EE’ | Module Lead Resistance, Terminal to Chip |
| 1.10 |
| mΩ |
RθJC | Junction-to-Case (per IGBT) Junction-to-Case (per Diode) |
|
| 0.074 0.121 | K/W |
RθCS | Case-to-Sink (per IGBT) Case-to-Sink (per Diode) |
| 0.029 0.047 |
| K/W |
RθCS | Case-to-Sink |
| 0.009 |
| K/W |
M | Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 | 3.0 3.0 |
| 6.0 6.0 | N.m |
G | Weight Module |
| 350 |
| g |
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