4500V 2000A
Brief introduction:
Customized production by YT, StakPak Package ,IGBT module with FWD.
Features
Applications
Maximum Rated Values
Parameter | Symbol | Conditions | Value | Unit |
Collector-Emitter Voltage | VCES | VGE=0V,Tvj=25°C | 4500 | V |
DC Collector Current | IC | TC=100°C,Tvj=125°C | 2000 | A |
Peak Collector Current | ICM | tp=1ms | 4000 | A |
Gate-Emitter Voltage | VGES |
| ±20 | V |
Total Power Dissipation | Ptot | TC=25°C,Tvj=125°C | 20800 | W |
DC Forward Current | IF |
| 2000 | A |
Peak Forward Current | IFRM | tp=1ms | 4000 | A |
Surge Current | IFSM | VR=0V,Tvj=125°C, tp=10ms,half-sinewave | 14000 | A |
IGBT Short Circuit SOA | tpsc | VCC=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤125°C | 10 | μs |
Maximum Junction Temperature | Tvj(max) |
| 125 | ℃ |
Junction Operating Temperature | Tvj(op) |
| -40~125 | ℃ |
Case temperature | TC |
| -40~125 | ℃ |
Storage Temperature | Tstg |
| -40~70 | ℃ |
Mounting force | FM |
| 60~75 | kN |
IGBT Characteristic Values
Parameter | Symbol | Conditions | Value | Unit | |||
Min. | Typ. | Max. | |||||
Collector-Emitter Breakdown Voltage | V(BR)CES | VGE=0V, IC=10mA, Tvj=25℃ | 4500 |
|
| V | |
Collector-Emitter Saturation Voltage | VCE(sat) | IC=2000A, VGE=15V | Tvj=25℃ |
| 2.70 | 3.05 | V |
Tvj=125℃ |
| 3.35 | 3.85 | V | |||
Collector-Emitter Cut-off Current | ICES | VCE=4500V, VGE=0V | Tvj=25℃ |
|
| 1 | mA |
Tvj=125℃ |
| 15 | 100 | mA | |||
Gate-Emitter Leakage Current | IGES | VCE=0V, VGE=±20V, Tvj=125℃ | -500 |
| 500 | nA | |
Gate-Emitter Threshold Voltage | VGE(th) | IC=320mA, VCE=VGE, Tvj=25℃ | 6.7 |
| 7.7 | V | |
Gate Charge | QG | IC=2000A, VCE=2800V, VGE=-15V~+15V |
| 10 |
| μC | |
Input Capacitance | Cies |
VCE=25V, VGE=0V, f=500kHz, Tvj=25℃ |
| 213 |
| nF | |
Output Capacitance | Coes |
| 15.3 |
| nF | ||
Reverse Transfer Capacitance | Cres |
| 4.7 |
| nF | ||
Internal Gate Resistance | RGint |
|
| 0 |
| Ω | |
Turn-on Delay Time | td(on) |
IC=2000A, VCE=2800V, VGE=±15V, RGon=1.8Ω, RGoff=8.2Ω, Cge=330nF, LS=140nH, Inductive Load | Tvj=25℃ |
| 1100 |
| ns |
Tvj=125℃ |
| 900 |
| ns | |||
Rise Time | tr | Tvj=25℃ |
| 400 |
| ns | |
Tvj=125℃ |
| 450 |
| ns | |||
Turn-off Delay Time | td(off) | Tvj=25℃ |
| 3800 |
| ns | |
Tvj=125℃ |
| 4100 |
| ns | |||
Fall Time | tf | Tvj=25℃ |
| 1200 |
| ns | |
Tvj=125℃ |
| 1400 |
| ns | |||
Turn-on Switching Energy | Eon | Tvj=25℃ |
| 14240 |
| mJ | |
Tvj=125℃ |
| 15730 |
| mJ | |||
Turn-off Switching Energy | Eoff | Tvj=25℃ |
| 6960 |
| mJ | |
Tvj=125℃ |
| 8180 |
| mJ | |||
Short Circuit Current |
ISC | VGE≤15V, tpsc≤10µs, VCC=3400V, Tvj=125℃ VCEM CHIP≤4500V |
|
8400 |
|
A | |
Diode Characteristic Values
Parameter | Symbol | Conditions | Value | Unit | |||
Min. | Typ. | Max. | |||||
Forward Voltage | VF | IF=2000A | Tvj=25℃ |
| 2.60 |
| V |
Tvj=125℃ |
| 2.85 |
| V | |||
Reverse Recovery Current | Irr |
IF=2000A, VR=2800V, VGE=15V, RGon=1.8Ω, LS=140nH, Inductive load | Tvj=25℃ |
| 1620 |
| A |
Tvj=125℃ |
| 1970 |
| A | |||
Reverse Recovery Charge | Qrr | Tvj=25℃ |
| 1750 |
| uC | |
Tvj=125℃ |
| 2700 |
| uC | |||
Reverse Recovery Time | trr | Tvj=25℃ |
| 4.0 |
| us | |
Tvj=125℃ |
| 5.1 |
| us | |||
Reverse Recovery Energy Loss | Erec | Tvj=25℃ |
| 2350 |
| mJ | |
Tvj=125℃ |
| 3860 |
| mJ | |||
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